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Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure

Tutkimustuotosvertaisarvioitu

Standard

Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure. / Lång, J.J.K.; Punkkinen, M.P.J.; Laukkanen, P.; Kuzmin, M.; Tuominen, V.; Pessa, Markus; Guina, Mircea; Väyrynen, I.J.; Kokko, K.; Johansson, B.; Vitos, L.

julkaisussa: Physical Review B, Vuosikerta 81, Nro 24, 245305, 2010, s. 245305-1-245305-9.

Tutkimustuotosvertaisarvioitu

Harvard

Lång, JJK, Punkkinen, MPJ, Laukkanen, P, Kuzmin, M, Tuominen, V, Pessa, M, Guina, M, Väyrynen, IJ, Kokko, K, Johansson, B & Vitos, L 2010, 'Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure', Physical Review B, Vuosikerta. 81, Nro 24, 245305, Sivut 245305-1-245305-9. https://doi.org/10.1103/PhysRevB.81.245305

APA

Lång, J. J. K., Punkkinen, M. P. J., Laukkanen, P., Kuzmin, M., Tuominen, V., Pessa, M., ... Vitos, L. (2010). Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure. Physical Review B, 81(24, 245305), 245305-1-245305-9. https://doi.org/10.1103/PhysRevB.81.245305

Vancouver

Lång JJK, Punkkinen MPJ, Laukkanen P, Kuzmin M, Tuominen V, Pessa M et al. Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure. Physical Review B. 2010;81(24, 245305):245305-1-245305-9. https://doi.org/10.1103/PhysRevB.81.245305

Author

Lång, J.J.K. ; Punkkinen, M.P.J. ; Laukkanen, P. ; Kuzmin, M. ; Tuominen, V. ; Pessa, Markus ; Guina, Mircea ; Väyrynen, I.J. ; Kokko, K. ; Johansson, B. ; Vitos, L. / Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure. Julkaisussa: Physical Review B. 2010 ; Vuosikerta 81, Nro 24, 245305. Sivut 245305-1-245305-9.

Bibtex - Lataa

@article{25087fbe04374ed5b8d3b79cccc31d4e,
title = "Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure",
author = "J.J.K. L{\aa}ng and M.P.J. Punkkinen and P. Laukkanen and M. Kuzmin and V. Tuominen and Markus Pessa and Mircea Guina and I.J. V{\"a}yrynen and K. Kokko and B. Johansson and L. Vitos",
note = "TEKES project SOLAR III-V<br/>Contribution: organisation=orc,FACT1=1",
year = "2010",
doi = "10.1103/PhysRevB.81.245305",
language = "English",
volume = "81",
pages = "245305--1--245305--9",
journal = "Physical Review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "24, 245305",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Ab initio and scanning tunneling microscopy study of indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in the c(8x2) structure

AU - Lång, J.J.K.

AU - Punkkinen, M.P.J.

AU - Laukkanen, P.

AU - Kuzmin, M.

AU - Tuominen, V.

AU - Pessa, Markus

AU - Guina, Mircea

AU - Väyrynen, I.J.

AU - Kokko, K.

AU - Johansson, B.

AU - Vitos, L.

N1 - TEKES project SOLAR III-V<br/>Contribution: organisation=orc,FACT1=1

PY - 2010

Y1 - 2010

U2 - 10.1103/PhysRevB.81.245305

DO - 10.1103/PhysRevB.81.245305

M3 - Article

VL - 81

SP - 245305-1-245305-9

JO - Physical Review B

JF - Physical Review B

SN - 1098-0121

IS - 24, 245305

ER -