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AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut1245-1248
Sivumäärä4
JulkaisuIEEE Photonics Technology Letters
Vuosikerta31
Numero15
DOI - pysyväislinkit
TilaJulkaistu - 1 elokuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.