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AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

Tutkimustuotosvertaisarvioitu

Standard

AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm. / Nechay, Kostiantyn; Kahle, Hermann; Penttinen, Jussi-Pekka; Rajala, Patrik; Tukiainen, Antti; Ranta, Sanna; Guina, Mircea.

julkaisussa: IEEE Photonics Technology Letters, Vuosikerta 31, Nro 15, 01.08.2019, s. 1245-1248.

Tutkimustuotosvertaisarvioitu

Harvard

Nechay, K, Kahle, H, Penttinen, J-P, Rajala, P, Tukiainen, A, Ranta, S & Guina, M 2019, 'AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm', IEEE Photonics Technology Letters, Vuosikerta. 31, Nro 15, Sivut 1245-1248. https://doi.org/10.1109/LPT.2019.2924289

APA

Vancouver

Author

Nechay, Kostiantyn ; Kahle, Hermann ; Penttinen, Jussi-Pekka ; Rajala, Patrik ; Tukiainen, Antti ; Ranta, Sanna ; Guina, Mircea. / AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm. Julkaisussa: IEEE Photonics Technology Letters. 2019 ; Vuosikerta 31, Nro 15. Sivut 1245-1248.

Bibtex - Lataa

@article{a5dc34e546cd4d13aa980c3e84c84efc,
title = "AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm",
abstract = "An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.",
keywords = "AlGaAs, AlGaInP, quantum well lasers, semiconductor disk lasers, semiconductor growth, semiconductor laser, vertical-external-cavity surface-emitting lasers (VECSELs)",
author = "Kostiantyn Nechay and Hermann Kahle and Jussi-Pekka Penttinen and Patrik Rajala and Antti Tukiainen and Sanna Ranta and Mircea Guina",
note = "INT=phys,{"}Rajala, Patrik{"}",
year = "2019",
month = "8",
day = "1",
doi = "10.1109/LPT.2019.2924289",
language = "English",
volume = "31",
pages = "1245--1248",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers",
number = "15",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

AU - Nechay, Kostiantyn

AU - Kahle, Hermann

AU - Penttinen, Jussi-Pekka

AU - Rajala, Patrik

AU - Tukiainen, Antti

AU - Ranta, Sanna

AU - Guina, Mircea

N1 - INT=phys,"Rajala, Patrik"

PY - 2019/8/1

Y1 - 2019/8/1

N2 - An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

AB - An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

KW - AlGaAs

KW - AlGaInP

KW - quantum well lasers

KW - semiconductor disk lasers

KW - semiconductor growth

KW - semiconductor laser

KW - vertical-external-cavity surface-emitting lasers (VECSELs)

U2 - 10.1109/LPT.2019.2924289

DO - 10.1109/LPT.2019.2924289

M3 - Article

VL - 31

SP - 1245

EP - 1248

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 15

ER -