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AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut980-985
JulkaisuJournal of Electronic Materials
Vuosikerta28
Numero8
DOI - pysyväislinkit
TilaJulkaistu - 1999
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

AlxGayIn1−x−yAs/InP strained-layer multiple-quantum-well lasers emitting at 1.3 µm have been grown by solid source molecular beam epitaxy, and the performance characteristics have been studied. The lasers contain 4, 5, or 6 compressively strained quantum wells in the active region. They exhibit low transparency current densities, high gain coefficients, and high characteristic temperatures compared to conventional GaInAsP/InP quantum well lasers. The results show that desired lasing features can be achieved with relatively simple layer structures if the doping profiles and waveguide structures are properly designed and the material is grown to high structural perfection.

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