TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Bending the ferroelectric domain wall by a bubble

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli345901
Sivumäärä5
JulkaisuJournal of Physics: Condensed Matter
Vuosikerta23
Numero34
DOI - pysyväislinkit
TilaJulkaistu - 31 elokuuta 2011
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

The shape of the ferroelectric domain wall mainly depends on the lattice structure and the pinning effect of random defects, but can we control it intentionally? Here we present a method to bend the domain wall by a bubble. A submillimeter bubble was put underneath a lithium niobate wafer inside a deionized water electrode to resist the propagation of the domain wall, and make the straight wall bend at an angle of 52 degrees. The perpendicular surface screening field was considered to directly relate to the bending angle and the motion of the surface charged droplets in the bubble, and the detachment of droplets determined the bending of the domain wall. Further experiments succeeded in varying the bending angle from 52 degrees to 0 degrees by changing the ion concentration of the liquid electrode.

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