Block copolymer lithography: Feature size control and extension by an over-etch technique
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Sivut | 318-323 |
| Sivumäärä | 6 |
| Julkaisu | Thin Solid Films |
| Vuosikerta | 522 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - 1 marraskuuta 2012 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.