TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Block copolymer lithography: Feature size control and extension by an over-etch technique

Tutkimustuotosvertaisarvioitu

Standard

Block copolymer lithography : Feature size control and extension by an over-etch technique. / Rasappa, Sozaraj; Borah, Dipu; Senthamaraikannan, Ramsankar; Faulkner, Colm C.; Shaw, Matthew T.; Gleeson, Peter; Holmes, Justin D.; Morris, Michael A.

julkaisussa: Thin Solid Films, Vuosikerta 522, 01.11.2012, s. 318-323.

Tutkimustuotosvertaisarvioitu

Harvard

Rasappa, S, Borah, D, Senthamaraikannan, R, Faulkner, CC, Shaw, MT, Gleeson, P, Holmes, JD & Morris, MA 2012, 'Block copolymer lithography: Feature size control and extension by an over-etch technique', Thin Solid Films, Vuosikerta. 522, Sivut 318-323. https://doi.org/10.1016/j.tsf.2012.09.017

APA

Rasappa, S., Borah, D., Senthamaraikannan, R., Faulkner, C. C., Shaw, M. T., Gleeson, P., ... Morris, M. A. (2012). Block copolymer lithography: Feature size control and extension by an over-etch technique. Thin Solid Films, 522, 318-323. https://doi.org/10.1016/j.tsf.2012.09.017

Vancouver

Rasappa S, Borah D, Senthamaraikannan R, Faulkner CC, Shaw MT, Gleeson P et al. Block copolymer lithography: Feature size control and extension by an over-etch technique. Thin Solid Films. 2012 marras 1;522:318-323. https://doi.org/10.1016/j.tsf.2012.09.017

Author

Rasappa, Sozaraj ; Borah, Dipu ; Senthamaraikannan, Ramsankar ; Faulkner, Colm C. ; Shaw, Matthew T. ; Gleeson, Peter ; Holmes, Justin D. ; Morris, Michael A. / Block copolymer lithography : Feature size control and extension by an over-etch technique. Julkaisussa: Thin Solid Films. 2012 ; Vuosikerta 522. Sivut 318-323.

Bibtex - Lataa

@article{326965fef813482690531f9b1649f4c0,
title = "Block copolymer lithography: Feature size control and extension by an over-etch technique",
abstract = "Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.",
keywords = "Block copolymer, Lithography, Over-etching, Plasma etching, Polystyrene-b-polymethylmethacrylate, Self-assembly, Silicon nanowires",
author = "Sozaraj Rasappa and Dipu Borah and Ramsankar Senthamaraikannan and Faulkner, {Colm C.} and Shaw, {Matthew T.} and Peter Gleeson and Holmes, {Justin D.} and Morris, {Michael A.}",
year = "2012",
month = "11",
day = "1",
doi = "10.1016/j.tsf.2012.09.017",
language = "English",
volume = "522",
pages = "318--323",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Block copolymer lithography

T2 - Feature size control and extension by an over-etch technique

AU - Rasappa, Sozaraj

AU - Borah, Dipu

AU - Senthamaraikannan, Ramsankar

AU - Faulkner, Colm C.

AU - Shaw, Matthew T.

AU - Gleeson, Peter

AU - Holmes, Justin D.

AU - Morris, Michael A.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.

AB - Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.

KW - Block copolymer

KW - Lithography

KW - Over-etching

KW - Plasma etching

KW - Polystyrene-b-polymethylmethacrylate

KW - Self-assembly

KW - Silicon nanowires

UR - http://www.scopus.com/inward/record.url?scp=84868593394&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.09.017

DO - 10.1016/j.tsf.2012.09.017

M3 - Article

VL - 522

SP - 318

EP - 323

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -