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Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut602-609
Sivumäärä8
JulkaisuIEEE Transactions on Electron Devices
Vuosikerta59
Numero3
DOI - pysyväislinkit
TilaJulkaistu - maaliskuuta 2012
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

Si/SiGe resonant interband tunnel diodes (RITD) were fabricated using CVD on 200-mm silicon wafers. The RITD devices consist of a p +-i-n + structure with δ-doped quantum wells providing resonant interband tunneling through a nominally intrinsic Si/SiGe region. The vapor-phase doping technique was used to obtain abrupt degenerate doping profiles. The boron doping in the δ-doped region was varied, and its effect on peak current density J p and peak-to-valley current ratio (PVCR) was studied. As the flow rate is reduced, J p was found to reduce while the PVCR initially increases and then decreases. Device simulations were performed using the ATLAS simulator developed by SILVACO to interpret the results. A maximum PVCR of 2.95 was obtained, and the highest J p recorded was 600 A/cm 2. This is the highest reported PVCR for any CVD-grown Si/SiGe RITD.