TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition

Tutkimustuotosvertaisarvioitu

Standard

Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition. / Ramesh, Anisha; Growden, Tyler A.; Berger, Paul R.; Loo, Roger; Vandervorst, Wilfried; Douhard, Bastien; Caymax, Matty.

julkaisussa: IEEE Transactions on Electron Devices, Vuosikerta 59, Nro 3, 03.2012, s. 602-609.

Tutkimustuotosvertaisarvioitu

Harvard

Ramesh, A, Growden, TA, Berger, PR, Loo, R, Vandervorst, W, Douhard, B & Caymax, M 2012, 'Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition', IEEE Transactions on Electron Devices, Vuosikerta. 59, Nro 3, Sivut 602-609. https://doi.org/10.1109/TED.2011.2180532

APA

Ramesh, A., Growden, T. A., Berger, P. R., Loo, R., Vandervorst, W., Douhard, B., & Caymax, M. (2012). Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition. IEEE Transactions on Electron Devices, 59(3), 602-609. https://doi.org/10.1109/TED.2011.2180532

Vancouver

Ramesh A, Growden TA, Berger PR, Loo R, Vandervorst W, Douhard B et al. Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition. IEEE Transactions on Electron Devices. 2012 maalis;59(3):602-609. https://doi.org/10.1109/TED.2011.2180532

Author

Ramesh, Anisha ; Growden, Tyler A. ; Berger, Paul R. ; Loo, Roger ; Vandervorst, Wilfried ; Douhard, Bastien ; Caymax, Matty. / Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition. Julkaisussa: IEEE Transactions on Electron Devices. 2012 ; Vuosikerta 59, Nro 3. Sivut 602-609.

Bibtex - Lataa

@article{c3236b5ce463467f8c6176eea297fbbc,
title = "Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition",
abstract = "Si/SiGe resonant interband tunnel diodes (RITD) were fabricated using CVD on 200-mm silicon wafers. The RITD devices consist of a p +-i-n + structure with δ-doped quantum wells providing resonant interband tunneling through a nominally intrinsic Si/SiGe region. The vapor-phase doping technique was used to obtain abrupt degenerate doping profiles. The boron doping in the δ-doped region was varied, and its effect on peak current density J p and peak-to-valley current ratio (PVCR) was studied. As the flow rate is reduced, J p was found to reduce while the PVCR initially increases and then decreases. Device simulations were performed using the ATLAS simulator developed by SILVACO to interpret the results. A maximum PVCR of 2.95 was obtained, and the highest J p recorded was 600 A/cm 2. This is the highest reported PVCR for any CVD-grown Si/SiGe RITD.",
keywords = "Band-to-band tunneling, chemical vapor deposition (CVD), Delta doping, resonant interband tunnel diodes (RITD), resonant tunneling, Si, SiGe",
author = "Anisha Ramesh and Growden, {Tyler A.} and Berger, {Paul R.} and Roger Loo and Wilfried Vandervorst and Bastien Douhard and Matty Caymax",
year = "2012",
month = "3",
doi = "10.1109/TED.2011.2180532",
language = "English",
volume = "59",
pages = "602--609",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",
number = "3",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition

AU - Ramesh, Anisha

AU - Growden, Tyler A.

AU - Berger, Paul R.

AU - Loo, Roger

AU - Vandervorst, Wilfried

AU - Douhard, Bastien

AU - Caymax, Matty

PY - 2012/3

Y1 - 2012/3

N2 - Si/SiGe resonant interband tunnel diodes (RITD) were fabricated using CVD on 200-mm silicon wafers. The RITD devices consist of a p +-i-n + structure with δ-doped quantum wells providing resonant interband tunneling through a nominally intrinsic Si/SiGe region. The vapor-phase doping technique was used to obtain abrupt degenerate doping profiles. The boron doping in the δ-doped region was varied, and its effect on peak current density J p and peak-to-valley current ratio (PVCR) was studied. As the flow rate is reduced, J p was found to reduce while the PVCR initially increases and then decreases. Device simulations were performed using the ATLAS simulator developed by SILVACO to interpret the results. A maximum PVCR of 2.95 was obtained, and the highest J p recorded was 600 A/cm 2. This is the highest reported PVCR for any CVD-grown Si/SiGe RITD.

AB - Si/SiGe resonant interband tunnel diodes (RITD) were fabricated using CVD on 200-mm silicon wafers. The RITD devices consist of a p +-i-n + structure with δ-doped quantum wells providing resonant interband tunneling through a nominally intrinsic Si/SiGe region. The vapor-phase doping technique was used to obtain abrupt degenerate doping profiles. The boron doping in the δ-doped region was varied, and its effect on peak current density J p and peak-to-valley current ratio (PVCR) was studied. As the flow rate is reduced, J p was found to reduce while the PVCR initially increases and then decreases. Device simulations were performed using the ATLAS simulator developed by SILVACO to interpret the results. A maximum PVCR of 2.95 was obtained, and the highest J p recorded was 600 A/cm 2. This is the highest reported PVCR for any CVD-grown Si/SiGe RITD.

KW - Band-to-band tunneling

KW - chemical vapor deposition (CVD)

KW - Delta doping

KW - resonant interband tunnel diodes (RITD)

KW - resonant tunneling

KW - Si

KW - SiGe

U2 - 10.1109/TED.2011.2180532

DO - 10.1109/TED.2011.2180532

M3 - Article

VL - 59

SP - 602

EP - 609

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

ER -