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TUTCRIS

Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti

Yksityiskohdat

AlkuperäiskieliEnglanti
TilaJulkaistu - 2016
TapahtumaMBE2016 19th International Conference on Molecular Beam Epitaxy - Montpellier, Ranska
Kesto: 4 syyskuuta 20169 syyskuuta 2016
https://mbe2016.sciencesconf.org/

Conference

ConferenceMBE2016 19th International Conference on Molecular Beam Epitaxy
LyhennettäMBE2016
MaaRanska
KaupunkiMontpellier
Ajanjakso4/09/169/09/16
www-osoite

Tiivistelmä

We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

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