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Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti

Standard

Combined MBE-MOCVD process for high-efficiency multijunction solar cells. / Tukiainen, Antti; Aho, Arto; Gori, Gabriele; Polojärvi, Ville; Casale, Mariacristina; Greco, Erminio; Isoaho, Riku; Aho, Timo; Raappana, Marianna; Campesato, Roberta; Guina, Mircea.

2016. Julkaisun esittämispaikka: MBE2016 19th International Conference on Molecular Beam Epitaxy, Montpellier, Ranska.

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti

Harvard

Tukiainen, A, Aho, A, Gori, G, Polojärvi, V, Casale, M, Greco, E, Isoaho, R, Aho, T, Raappana, M, Campesato, R & Guina, M 2016, 'Combined MBE-MOCVD process for high-efficiency multijunction solar cells' Artikkeli esitetty, Montpellier, Ranska, 4/09/16 - 9/09/16, .

APA

Tukiainen, A., Aho, A., Gori, G., Polojärvi, V., Casale, M., Greco, E., ... Guina, M. (2016). Combined MBE-MOCVD process for high-efficiency multijunction solar cells. Julkaisun esittämispaikka: MBE2016 19th International Conference on Molecular Beam Epitaxy, Montpellier, Ranska.

Vancouver

Tukiainen A, Aho A, Gori G, Polojärvi V, Casale M, Greco E et al. Combined MBE-MOCVD process for high-efficiency multijunction solar cells. 2016. Julkaisun esittämispaikka: MBE2016 19th International Conference on Molecular Beam Epitaxy, Montpellier, Ranska.

Author

Tukiainen, Antti ; Aho, Arto ; Gori, Gabriele ; Polojärvi, Ville ; Casale, Mariacristina ; Greco, Erminio ; Isoaho, Riku ; Aho, Timo ; Raappana, Marianna ; Campesato, Roberta ; Guina, Mircea. / Combined MBE-MOCVD process for high-efficiency multijunction solar cells. Julkaisun esittämispaikka: MBE2016 19th International Conference on Molecular Beam Epitaxy, Montpellier, Ranska.

Bibtex - Lataa

@conference{3f53a35c85344fc495b450dc8f2d6044,
title = "Combined MBE-MOCVD process for high-efficiency multijunction solar cells",
abstract = "We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29{\%} at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.",
author = "Antti Tukiainen and Arto Aho and Gabriele Gori and Ville Poloj{\"a}rvi and Mariacristina Casale and Erminio Greco and Riku Isoaho and Timo Aho and Marianna Raappana and Roberta Campesato and Mircea Guina",
year = "2016",
language = "English",
note = "MBE2016 19th International Conference on Molecular Beam Epitaxy, MBE2016 ; Conference date: 04-09-2016 Through 09-09-2016",
url = "https://mbe2016.sciencesconf.org/",

}

RIS (suitable for import to EndNote) - Lataa

TY - CONF

T1 - Combined MBE-MOCVD process for high-efficiency multijunction solar cells

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Gori, Gabriele

AU - Polojärvi, Ville

AU - Casale, Mariacristina

AU - Greco, Erminio

AU - Isoaho, Riku

AU - Aho, Timo

AU - Raappana, Marianna

AU - Campesato, Roberta

AU - Guina, Mircea

PY - 2016

Y1 - 2016

N2 - We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

AB - We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

M3 - Paper, poster or abstract

ER -