Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Sivut | 263-267 |
| Sivumäärä | 5 |
| Julkaisu | Semiconductors |
| Vuosikerta | 54 |
| Numero | 2 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - 1 helmikuuta 2020 |
| OKM-julkaisutyyppi | A1 Alkuperäisartikkeli |
Tiivistelmä
Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.