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Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

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Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut263-267
Sivumäärä5
JulkaisuSemiconductors
Vuosikerta54
Numero2
DOI - pysyväislinkit
TilaJulkaistu - 1 helmikuuta 2020
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.

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