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Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

Tutkimustuotosvertaisarvioitu

Standard

Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots. / Moiseev, E. I.; Maximov, M. V.; Kryzhanovskaya, N. V.; Simchuk, O. I.; Kulagina, M. M.; Kadinskaya, S. A.; Guina, M.; Zhukov, A. E.

julkaisussa: Semiconductors, Vuosikerta 54, Nro 2, 01.02.2020, s. 263-267.

Tutkimustuotosvertaisarvioitu

Harvard

Moiseev, EI, Maximov, MV, Kryzhanovskaya, NV, Simchuk, OI, Kulagina, MM, Kadinskaya, SA, Guina, M & Zhukov, AE 2020, 'Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots', Semiconductors, Vuosikerta. 54, Nro 2, Sivut 263-267. https://doi.org/10.1134/S1063782620020177

APA

Moiseev, E. I., Maximov, M. V., Kryzhanovskaya, N. V., Simchuk, O. I., Kulagina, M. M., Kadinskaya, S. A., ... Zhukov, A. E. (2020). Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots. Semiconductors, 54(2), 263-267. https://doi.org/10.1134/S1063782620020177

Vancouver

Moiseev EI, Maximov MV, Kryzhanovskaya NV, Simchuk OI, Kulagina MM, Kadinskaya SA et al. Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots. Semiconductors. 2020 helmi 1;54(2):263-267. https://doi.org/10.1134/S1063782620020177

Author

Moiseev, E. I. ; Maximov, M. V. ; Kryzhanovskaya, N. V. ; Simchuk, O. I. ; Kulagina, M. M. ; Kadinskaya, S. A. ; Guina, M. ; Zhukov, A. E. / Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots. Julkaisussa: Semiconductors. 2020 ; Vuosikerta 54, Nro 2. Sivut 263-267.

Bibtex - Lataa

@article{6c591540fba74a208c0165652115dbbc,
title = "Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots",
abstract = "Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.",
keywords = "microlaser, nitrogen-containing semiconductors, quantum dots, quantum wells",
author = "Moiseev, {E. I.} and Maximov, {M. V.} and Kryzhanovskaya, {N. V.} and Simchuk, {O. I.} and Kulagina, {M. M.} and Kadinskaya, {S. A.} and M. Guina and Zhukov, {A. E.}",
year = "2020",
month = "2",
day = "1",
doi = "10.1134/S1063782620020177",
language = "English",
volume = "54",
pages = "263--267",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "MAIK Nauka/Interperiodica",
number = "2",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

AU - Moiseev, E. I.

AU - Maximov, M. V.

AU - Kryzhanovskaya, N. V.

AU - Simchuk, O. I.

AU - Kulagina, M. M.

AU - Kadinskaya, S. A.

AU - Guina, M.

AU - Zhukov, A. E.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.

AB - Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.

KW - microlaser

KW - nitrogen-containing semiconductors

KW - quantum dots

KW - quantum wells

U2 - 10.1134/S1063782620020177

DO - 10.1134/S1063782620020177

M3 - Article

VL - 54

SP - 263

EP - 267

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -