Concentration of interstitial and substitutional nitrogen in GaNxAs1-x
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Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. / Ahlgren, T.; Vainonen-Ahlgren, E.; Likonen, J.; Li, W.; Pessa, M.
julkaisussa: Applied Physics Letters, Vuosikerta 80, Nro 13, 2002, s. 2314-2316.Tutkimustuotos › › vertaisarvioitu
Harvard
Ahlgren, T, Vainonen-Ahlgren, E, Likonen, J, Li, W & Pessa, M 2002, 'Concentration of interstitial and substitutional nitrogen in GaNxAs1-x', Applied Physics Letters, Vuosikerta. 80, Nro 13, Sivut 2314-2316.
APA
Ahlgren, T., Vainonen-Ahlgren, E., Likonen, J., Li, W., & Pessa, M. (2002). Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. Applied Physics Letters, 80(13), 2314-2316.
Vancouver
Ahlgren T, Vainonen-Ahlgren E, Likonen J, Li W, Pessa M. Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. Applied Physics Letters. 2002;80(13):2314-2316.
Author
Bibtex - Lataa
@article{d94bd83f700d4e7695b95dbdfd30905e,
title = "Concentration of interstitial and substitutional nitrogen in GaNxAs1-x",
author = "T. Ahlgren and E. Vainonen-Ahlgren and J. Likonen and W. Li and M. Pessa",
note = "Contribution: organisation=orc,FACT1=1",
year = "2002",
language = "English",
volume = "80",
pages = "2314--2316",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "13",
}
RIS (suitable for import to EndNote) - Lataa
TY - JOUR
T1 - Concentration of interstitial and substitutional nitrogen in GaNxAs1-x
AU - Ahlgren, T.
AU - Vainonen-Ahlgren, E.
AU - Likonen, J.
AU - Li, W.
AU - Pessa, M.
N1 - Contribution: organisation=orc,FACT1=1
PY - 2002
Y1 - 2002
M3 - Article
VL - 80
SP - 2314
EP - 2316
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
ER -