Decomposition of Drain Current In Weak, Moderate, and Strong Inversion Components
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Yksityiskohdat
| Alkuperäiskieli | Englanti |
|---|---|
| Otsikko | 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
| Kustantaja | IEEE |
| Sivut | 827-830 |
| Sivumäärä | 4 |
| ISBN (elektroninen) | 978-1-7281-0996-1 |
| ISBN (painettu) | 978-1-7281-0997-8 |
| DOI - pysyväislinkit | |
| Tila | Julkaistu - marraskuuta 2019 |
| OKM-julkaisutyyppi | A4 Artikkeli konferenssijulkaisussa |
| Tapahtuma | IEEE International Conference on Electronics, Circuits and Systems - Kesto: 31 joulukuuta 1899 → … |
Conference
| Conference | IEEE International Conference on Electronics, Circuits and Systems |
|---|---|
| Ajanjakso | 31/12/99 → … |
Tiivistelmä
Using “reconciliation” MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.