Defect engineering of atomic layer deposited TiO2 for photocatalytic applications
Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti ›
|Tila||Julkaistu - 28 toukokuuta 2019|
|Tapahtuma||Optics and Photonics Days 2019 - Espoo, Suomi|
Kesto: 27 toukokuuta 2019 → 29 toukokuuta 2019
|Conference||Optics and Photonics Days 2019|
|Ajanjakso||27/05/19 → 29/05/19|
In our recent studies, we have reported means to thermally modify the defect structure of ALD grown am.-TiO2 thin film under oxidative  and reductive  conditions. TiO2 films were grown on silicon and fused quartz substrates by ALD at 200 °C using tetrakis(dimethylamido)titanium (TDMAT) and deionized water as precursors. Based on the results, the as-deposited am.-TiO2 is chemically unstable and visually black exhibiting both enhanced absorbance in the visible range and exceptionally high conductivity due to the trapped charge carriers (Ti3+). Heat treatment in air at 200°C induces oxidation of Ti3+, decrease in absorb-ance and conductivity but has only a minor effect on the stability. However, a reasonable stability is obtained after oxidation at 300 °C, simultaneously with the crystallization of TiO2 into rutile. Furthermore, oxidation at 500 °C results in stable rutile TiO2 that produces the highest photocurrent for water oxidation. In contrast, reductive heat treatment in ultra-high vacuum (UHV) at 500 °C retains the amorphous phase for TiO2 but enhances the stability due to the formation of O– species via electron transfer from O to Ti. The schematic illustration of the effect of oxidative heat treatment on the defect structure of ALD TiO2 is shown in Figure 1.
As a conclusion, ALD TiO2 has proven its diversity. Conductive as-deposited black TiO2 is photoelectrochemically unstable but it can be transformed into stable phases of photocatalytically active rutile or electrically “leaky” amorphous black TiO2 by heat treatment in oxidative or reductive conditions, respectively.
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