TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Design considerations on GaInNAs solar cells with back surface reflectors

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti

Yksityiskohdat

AlkuperäiskieliEnglanti
TilaJulkaistu - 2017
TapahtumaIEEE - 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) - the Marriott Wardman Park Hotel, , Washington D.C., Yhdysvallat
Kesto: 25 kesäkuuta 201730 kesäkuuta 2017
Konferenssinumero: 44

Conference

ConferenceIEEE - 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)
LyhennettäPVSC
MaaYhdysvallat
KaupunkiWashington D.C.
Ajanjakso25/06/1730/06/17

Tiivistelmä

We report on modeling of electrical characteristics of dilute nitride GaInNAs solar cells with specular and diffuse back surface reflectors. The paper concentrates on optimization of the GaInNAs junction thickness and doping level for various reflectors. Usually, it is considered that the doping level of GaInNAs should be clearly below 1×1016 cm-3 to be usable for active sub-junction material of high-efficiency triple junction solar cells. Here we show that this requirement can be alleviated by using high quality diffuse back surface reflectors and thus GaInNAs with background doping levels even exceeding 1×1016 cm-3 can be used for junction formation for high-efficiency multijunction solar cells. The reflectance of the back surface reflector is shown to affect the optimal GaInNAs thickness. The higher the reflectance the thinner layers can be used. We also show that the optimal GaInNAs layer thickness is different depending on whether the optimization is done for the short circuit current density or open circuit voltage.