TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Determination of composition and energy gaps of GaInNAsSb layers grown by MBE

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut49-54
Sivumäärä6
JulkaisuJournal of Crystal Growth
Vuosikerta438
DOI - pysyväislinkit
TilaJulkaistu - 15 maaliskuuta 2016
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We present a method to accurately determine the composition of GaInNAsSb heterostructures and a modified band anti-crossing model to calculate the corresponding bandgaps. The composition determination method is based on combining x-ray diffractometry and energy dispersive x-ray spectroscopy measurements. The modified band anti-crossing model was derived from the model known for GaInNAs and using band-gap composition relations for GaInAs, GaInSb, InAsSb and GaAsSb. The model parameters were defined by fitting with experimental bandgap data retrieved from photoluminescence. For validation and data fitting we used experimental samples with N composition in the range of 0-0.06, In composition from 0 to 0.17, and Sb composition in the range of 0-0.08. All samples were thermally annealed to minimize the band gap shift caused by the short range ordering effects in GaInNAsSb crystal. The modified model yields an excellent fit to the experimental band gap data with an accuracy of ~20 meV, and is a practical tool for designing, fabricating and analyzing optoelectronics devices.

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