TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Diffusion processes and growth on aluminum cluster surfaces

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut496-502
Sivumäärä7
JulkaisuZeitschrift fur Physik D-Atoms Molecules and Clusters
Vuosikerta40
Numero1-4
DOI - pysyväislinkit
TilaJulkaistu - 1 tammikuuta 1997
Julkaistu ulkoisestiKyllä
OKM-julkaisutyyppiEi OKM-tyyppiä

Tiivistelmä

Diffusion processes of adatoms on icosahedral and Wulff polyhedral aluminum cluster surfaces have been studied by molecular dynamics simulations using the effective medium theory. Activation energies of diffusion mechanisms along {111} and {100} facets and from one facet to another, including different hopping and exchange processes as well as more exotic events, have been calculated. Exchange diffusion of an adatom by a chain mechanism through a {100} facet between two {111} facets and hopping diffusion across the edge between two {111} facets via a pull of another adatom on the neighbour facet are shown to play an important role. Adatoms on {111} facets are mobile already at very low temperatures, but on {100} facets diffusion starts above the room temperature as well as diffusion from {111} facets to {100} facets. Diffusion from {100} facet to other facets was not observed until at temperatures close to the melting temperatures of clusters. Dynamical simulations at different temperatures confirmed the appearance of diffusion mechanisms predicted by the activation energies.

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