TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut740-744
Sivumäärä5
JulkaisuProgress in Photovoltaics: Research and Applications
Vuosikerta26
Numero19
Varhainen verkossa julkaisun päivämäärähuhtikuuta 2018
DOI - pysyväislinkit
TilaJulkaistu - syyskuuta 2018
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We report a detailed performance assessment of triple junction dilute nitride solar cells fabricated by a combined molecular beam epitaxy-metal organic chemical vapor deposition process and designed for space applications. The experimental sample exhibits an efficiency level of 30.8% under AM0 illumination. Analyses of the isotype single junction dilute nitride bottom cells reveal a band gap voltage offset of 0.49 V at one sun illumination and a value as low as 0.47 V for full spectrum excitation without filter layers. The analyses point out the limitation of the design in terms of current balancing. With optimized design, an efficiency of 32.1% is possible, revealing the maturity reached by dilute nitride technology in the quest for improving the efficiency of lattice-matched multijunction solar cells.