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Double-asymmetric-structure 1.5 μ m high power laser diodes

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Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoProceedings of the 2019 IEEE High Power Diode Lasers and Systems Conference, HPD 2019 - Co-located with Photonex 2019
KustantajaIEEE
Sivut19-20
Sivumäärä2
ISBN (elektroninen)9781728130972
DOI - pysyväislinkit
TilaJulkaistu - 1 lokakuuta 2019
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaIEEE High Power Diode Lasers and Systems Conference - Coventry, Iso-Britannia
Kesto: 9 lokakuuta 201910 lokakuuta 2019

Conference

ConferenceIEEE High Power Diode Lasers and Systems Conference
MaaIso-Britannia
KaupunkiCoventry
Ajanjakso9/10/1910/10/19

Tiivistelmä

Design considerations for high pulsed power and brightness 1.5 μm laser emitters for laser radar applications, based on comprehensive semi-analytical theory, are presented. A strongly asymmetric waveguide design with a bulk active layer positioned very near the p-emitter interface is chosen to minimize the current-induced losses at high power while maintaining a single, broad transverse mode. Moderate to high doping of the n-side of the Optical Confinement Layer and high p-doping of the p-cladding layer are used to reduce the residual current-induced losses and the electric resistance of the structure. For pulsed room-temperature operation, short laser resonators are found to be advantageous. First experimental results are presented. An as-cleaved sample with a stripe width of90 μm and a resonator2 mm long exhibits an output power of about 18 W at a pumping current amplitude of 80 A, with 1 mm long resonators showing higher power output. Further improvements are predicted by structure optimization as well as increase in internal quantum efficiency and thermal performance.

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