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Electrical Contacts in SOI MEMS Using Aerosol Jet Printing

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Standard

Electrical Contacts in SOI MEMS Using Aerosol Jet Printing. / Khorramdel, Behnam; Torkkeli, Altti; Mäntysalo, Matti.

julkaisussa: IEEE Journal of the Electron Devices Society, Vuosikerta 6, 2017, s. 34-40.

Tutkimustuotosvertaisarvioitu

Harvard

Khorramdel, B, Torkkeli, A & Mäntysalo, M 2017, 'Electrical Contacts in SOI MEMS Using Aerosol Jet Printing', IEEE Journal of the Electron Devices Society, Vuosikerta. 6, Sivut 34-40. https://doi.org/10.1109/JEDS.2017.2764498

APA

Khorramdel, B., Torkkeli, A., & Mäntysalo, M. (2017). Electrical Contacts in SOI MEMS Using Aerosol Jet Printing. IEEE Journal of the Electron Devices Society, 6, 34-40. https://doi.org/10.1109/JEDS.2017.2764498

Vancouver

Khorramdel B, Torkkeli A, Mäntysalo M. Electrical Contacts in SOI MEMS Using Aerosol Jet Printing. IEEE Journal of the Electron Devices Society. 2017;6:34-40. https://doi.org/10.1109/JEDS.2017.2764498

Author

Khorramdel, Behnam ; Torkkeli, Altti ; Mäntysalo, Matti. / Electrical Contacts in SOI MEMS Using Aerosol Jet Printing. Julkaisussa: IEEE Journal of the Electron Devices Society. 2017 ; Vuosikerta 6. Sivut 34-40.

Bibtex - Lataa

@article{192482c21edf44e897fc4790ebca3201,
title = "Electrical Contacts in SOI MEMS Using Aerosol Jet Printing",
abstract = "In this study, an additive method to make electrical contacts in SOI MEMS devices with aerosol jet printing is introduced. Small grooves were etched to the frame of MEMS accelerometer in the same step with the active structure release. Aluminum ink was jetted to the trenches in wafer-level to bridge the device layer to the handle wafer with the minimum amount of material. After subsequent annealing ohmic contacts between p-type device layer and p-type handle silicon were verified by I-V measurements. The via resistance less than 4 Y per via is measured. The method demonstrated in this work provides simple and low-cost approach for SOI handle contact where additional packaging of wafer process steps can be avoided.",
keywords = "additive manufacturing., aerosol jet printing, Aerosols, Cavity resonators, Electrical resistance measurement, Ink, inkjet printing, microelectromechanical systems (MEMS), Micromechanical devices, Printing, silicon on insulator (SOI), Silicon-on-insulator",
author = "Behnam Khorramdel and Altti Torkkeli and Matti M{\"a}ntysalo",
year = "2017",
doi = "10.1109/JEDS.2017.2764498",
language = "English",
volume = "6",
pages = "34--40",
journal = "IEEE Journal of the Electron Devices Society",
issn = "2168-6734",
publisher = "IEEE",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Electrical Contacts in SOI MEMS Using Aerosol Jet Printing

AU - Khorramdel, Behnam

AU - Torkkeli, Altti

AU - Mäntysalo, Matti

PY - 2017

Y1 - 2017

N2 - In this study, an additive method to make electrical contacts in SOI MEMS devices with aerosol jet printing is introduced. Small grooves were etched to the frame of MEMS accelerometer in the same step with the active structure release. Aluminum ink was jetted to the trenches in wafer-level to bridge the device layer to the handle wafer with the minimum amount of material. After subsequent annealing ohmic contacts between p-type device layer and p-type handle silicon were verified by I-V measurements. The via resistance less than 4 Y per via is measured. The method demonstrated in this work provides simple and low-cost approach for SOI handle contact where additional packaging of wafer process steps can be avoided.

AB - In this study, an additive method to make electrical contacts in SOI MEMS devices with aerosol jet printing is introduced. Small grooves were etched to the frame of MEMS accelerometer in the same step with the active structure release. Aluminum ink was jetted to the trenches in wafer-level to bridge the device layer to the handle wafer with the minimum amount of material. After subsequent annealing ohmic contacts between p-type device layer and p-type handle silicon were verified by I-V measurements. The via resistance less than 4 Y per via is measured. The method demonstrated in this work provides simple and low-cost approach for SOI handle contact where additional packaging of wafer process steps can be avoided.

KW - additive manufacturing.

KW - aerosol jet printing

KW - Aerosols

KW - Cavity resonators

KW - Electrical resistance measurement

KW - Ink

KW - inkjet printing

KW - microelectromechanical systems (MEMS)

KW - Micromechanical devices

KW - Printing

KW - silicon on insulator (SOI)

KW - Silicon-on-insulator

U2 - 10.1109/JEDS.2017.2764498

DO - 10.1109/JEDS.2017.2764498

M3 - Article

VL - 6

SP - 34

EP - 40

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

ER -