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Energy deposition of keV electrons in light elements

Tutkimustuotosvertaisarvioitu

Standard

Energy deposition of keV electrons in light elements. / Valkealahti, S.; Schou, J.; Nieminen, R. M.

julkaisussa: Journal of Applied Physics, Vuosikerta 65, Nro 6, 01.12.1989, s. 2258-2266.

Tutkimustuotosvertaisarvioitu

Harvard

Valkealahti, S, Schou, J & Nieminen, RM 1989, 'Energy deposition of keV electrons in light elements', Journal of Applied Physics, Vuosikerta. 65, Nro 6, Sivut 2258-2266. https://doi.org/10.1063/1.342839

APA

Valkealahti, S., Schou, J., & Nieminen, R. M. (1989). Energy deposition of keV electrons in light elements. Journal of Applied Physics, 65(6), 2258-2266. https://doi.org/10.1063/1.342839

Vancouver

Valkealahti S, Schou J, Nieminen RM. Energy deposition of keV electrons in light elements. Journal of Applied Physics. 1989 joulu 1;65(6):2258-2266. https://doi.org/10.1063/1.342839

Author

Valkealahti, S. ; Schou, J. ; Nieminen, R. M. / Energy deposition of keV electrons in light elements. Julkaisussa: Journal of Applied Physics. 1989 ; Vuosikerta 65, Nro 6. Sivut 2258-2266.

Bibtex - Lataa

@article{88f62c6061be46d9bd011858d397e1be,
title = "Energy deposition of keV electrons in light elements",
abstract = "The Monte Carlo simulation method has been used to investigate the spatial distribution of deposited energy for 1-10 keV electrons incident on solid hydrogen, nitrogen, neon, silicon, aluminum, and argon. In the simulation, elastic scattering cross sections are calculated exactly using the single-atom crystalline potentials. Inelastic energy loss processes for hydrogen are based on the ionization cross section from Green and Sawada [J. Atmos. Terr. Phys. 34, 1719 (1972)] and the gas-phase stopping power from Parks et al. [Nucl. Fus. 17, 539 (1977)]. For the heavier materials a modification of Gryziński's [Phys. Rev. A 138, 305 (1965); 138, 322 (1965); 138, 336 (1965)] semiempirical expression for each core and valence electron excitation is used. The energy-deposition distribution of keV electrons and the ionization distribution of weakly bound electrons are practically equal, whereas the penetration depth distribution extends deeper into the material than the energy-deposition distribution. The energy-deposition distributions of keV electrons for light materials, except for hydrogen, can be represented quite well by a universal distribution. In addition, accurate Gaussian approximations for the different materials in the entire energy region from 1 to 10 keV have been evaluated. Parameters such as the mean penetration depth and the mean energy-deposition depth are included as well.",
author = "S. Valkealahti and J. Schou and Nieminen, {R. M.}",
year = "1989",
month = "12",
day = "1",
doi = "10.1063/1.342839",
language = "English",
volume = "65",
pages = "2258--2266",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "6",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Energy deposition of keV electrons in light elements

AU - Valkealahti, S.

AU - Schou, J.

AU - Nieminen, R. M.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - The Monte Carlo simulation method has been used to investigate the spatial distribution of deposited energy for 1-10 keV electrons incident on solid hydrogen, nitrogen, neon, silicon, aluminum, and argon. In the simulation, elastic scattering cross sections are calculated exactly using the single-atom crystalline potentials. Inelastic energy loss processes for hydrogen are based on the ionization cross section from Green and Sawada [J. Atmos. Terr. Phys. 34, 1719 (1972)] and the gas-phase stopping power from Parks et al. [Nucl. Fus. 17, 539 (1977)]. For the heavier materials a modification of Gryziński's [Phys. Rev. A 138, 305 (1965); 138, 322 (1965); 138, 336 (1965)] semiempirical expression for each core and valence electron excitation is used. The energy-deposition distribution of keV electrons and the ionization distribution of weakly bound electrons are practically equal, whereas the penetration depth distribution extends deeper into the material than the energy-deposition distribution. The energy-deposition distributions of keV electrons for light materials, except for hydrogen, can be represented quite well by a universal distribution. In addition, accurate Gaussian approximations for the different materials in the entire energy region from 1 to 10 keV have been evaluated. Parameters such as the mean penetration depth and the mean energy-deposition depth are included as well.

AB - The Monte Carlo simulation method has been used to investigate the spatial distribution of deposited energy for 1-10 keV electrons incident on solid hydrogen, nitrogen, neon, silicon, aluminum, and argon. In the simulation, elastic scattering cross sections are calculated exactly using the single-atom crystalline potentials. Inelastic energy loss processes for hydrogen are based on the ionization cross section from Green and Sawada [J. Atmos. Terr. Phys. 34, 1719 (1972)] and the gas-phase stopping power from Parks et al. [Nucl. Fus. 17, 539 (1977)]. For the heavier materials a modification of Gryziński's [Phys. Rev. A 138, 305 (1965); 138, 322 (1965); 138, 336 (1965)] semiempirical expression for each core and valence electron excitation is used. The energy-deposition distribution of keV electrons and the ionization distribution of weakly bound electrons are practically equal, whereas the penetration depth distribution extends deeper into the material than the energy-deposition distribution. The energy-deposition distributions of keV electrons for light materials, except for hydrogen, can be represented quite well by a universal distribution. In addition, accurate Gaussian approximations for the different materials in the entire energy region from 1 to 10 keV have been evaluated. Parameters such as the mean penetration depth and the mean energy-deposition depth are included as well.

U2 - 10.1063/1.342839

DO - 10.1063/1.342839

M3 - Article

VL - 65

SP - 2258

EP - 2266

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -