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Engineering of Chern insulators and circuits of topological edge states

Tutkimustuotosvertaisarvioitu

Standard

Engineering of Chern insulators and circuits of topological edge states. / Minarelli, Emma L.; Poÿhönen, Kim; Van Dalum, Gerwin A.R.; Ojanen, Teemu; Fritz, Lars.

julkaisussa: Physical Review B, Vuosikerta 99, Nro 16, 165413, 10.04.2019.

Tutkimustuotosvertaisarvioitu

Harvard

Minarelli, EL, Poÿhönen, K, Van Dalum, GAR, Ojanen, T & Fritz, L 2019, 'Engineering of Chern insulators and circuits of topological edge states', Physical Review B, Vuosikerta. 99, Nro 16, 165413. https://doi.org/10.1103/PhysRevB.99.165413

APA

Minarelli, E. L., Poÿhönen, K., Van Dalum, G. A. R., Ojanen, T., & Fritz, L. (2019). Engineering of Chern insulators and circuits of topological edge states. Physical Review B, 99(16), [165413]. https://doi.org/10.1103/PhysRevB.99.165413

Vancouver

Minarelli EL, Poÿhönen K, Van Dalum GAR, Ojanen T, Fritz L. Engineering of Chern insulators and circuits of topological edge states. Physical Review B. 2019 huhti 10;99(16). 165413. https://doi.org/10.1103/PhysRevB.99.165413

Author

Minarelli, Emma L. ; Poÿhönen, Kim ; Van Dalum, Gerwin A.R. ; Ojanen, Teemu ; Fritz, Lars. / Engineering of Chern insulators and circuits of topological edge states. Julkaisussa: Physical Review B. 2019 ; Vuosikerta 99, Nro 16.

Bibtex - Lataa

@article{e6267be272c34a7a966dad1e0ad597c0,
title = "Engineering of Chern insulators and circuits of topological edge states",
abstract = "Impurities embedded in electronic systems induce bound states which under certain circumstances can hybridize and lead to impurity bands. Doping of insulators with impurities has been identified as a promising route toward engineering electronic topological states of matter. In this paper we show how to realize tuneable Chern insulators starting from a three-dimensional topological insulator whose surface is gapped and intentionally doped with magnetic impurities. The main advantage of the protocol is that it is robust and in particular not very sensitive to the impurity configuration. We explicitly demonstrate this for a square lattice of impurities as well as a random lattice. In both cases we show that it is possible to change the Chern number of the system by one through manipulating its topological state. We also discuss how this can be used to engineer circuits of edge channels.",
author = "Minarelli, {Emma L.} and Kim Po{\"y}h{\"o}nen and {Van Dalum}, {Gerwin A.R.} and Teemu Ojanen and Lars Fritz",
year = "2019",
month = "4",
day = "10",
doi = "10.1103/PhysRevB.99.165413",
language = "English",
volume = "99",
journal = "Physical Review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "16",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Engineering of Chern insulators and circuits of topological edge states

AU - Minarelli, Emma L.

AU - Poÿhönen, Kim

AU - Van Dalum, Gerwin A.R.

AU - Ojanen, Teemu

AU - Fritz, Lars

PY - 2019/4/10

Y1 - 2019/4/10

N2 - Impurities embedded in electronic systems induce bound states which under certain circumstances can hybridize and lead to impurity bands. Doping of insulators with impurities has been identified as a promising route toward engineering electronic topological states of matter. In this paper we show how to realize tuneable Chern insulators starting from a three-dimensional topological insulator whose surface is gapped and intentionally doped with magnetic impurities. The main advantage of the protocol is that it is robust and in particular not very sensitive to the impurity configuration. We explicitly demonstrate this for a square lattice of impurities as well as a random lattice. In both cases we show that it is possible to change the Chern number of the system by one through manipulating its topological state. We also discuss how this can be used to engineer circuits of edge channels.

AB - Impurities embedded in electronic systems induce bound states which under certain circumstances can hybridize and lead to impurity bands. Doping of insulators with impurities has been identified as a promising route toward engineering electronic topological states of matter. In this paper we show how to realize tuneable Chern insulators starting from a three-dimensional topological insulator whose surface is gapped and intentionally doped with magnetic impurities. The main advantage of the protocol is that it is robust and in particular not very sensitive to the impurity configuration. We explicitly demonstrate this for a square lattice of impurities as well as a random lattice. In both cases we show that it is possible to change the Chern number of the system by one through manipulating its topological state. We also discuss how this can be used to engineer circuits of edge channels.

U2 - 10.1103/PhysRevB.99.165413

DO - 10.1103/PhysRevB.99.165413

M3 - Article

VL - 99

JO - Physical Review B

JF - Physical Review B

SN - 1098-0121

IS - 16

M1 - 165413

ER -