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TUTCRIS

Extraction of Schottky Barrier Parameters for Metal–Semiconductor Junctions on High Resistivity Inhomogeneous, Semiconductors

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut465-470
Sivumäärä6
JulkaisuIEEE Transactions on Electron Devices
Vuosikerta62
Numero2
DOI - pysyväislinkit
TilaJulkaistu - 1 helmikuuta 2015
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We present a novel method for the extraction of the relevant electrical and physical parameters of Schottky diodes realized on polycrystalline thin films. The proposed approach relies on a limited set of current-voltage characteristics measured at different temperatures and does not require the previous knowledge of any semiconductor parameter. The procedure provides satisfactory results in terms of relative errors even in the case of nonideal characteristics, including a very large series resistance and strong temperature and bias dependence of both barrier and ideality factor. We tested the approach on both simulated devices and real Cr-poly-Si Schottky diodes.

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