TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
KustantajaSPIE
ISBN (elektroninen)9781510600034
DOI - pysyväislinkit
TilaJulkaistu - 2016
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting -
Kesto: 1 tammikuuta 2000 → …

Julkaisusarja

NimiProceedings of SPIE
Vuosikerta9768
ISSN (painettu)0277-786X
ISSN (elektroninen)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting
Ajanjakso1/01/00 → …

Tiivistelmä

Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.

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