Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength

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Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength. / Zia, Nouman ; Viheriälä, Jukka; Koskinen, Riku; Koskinen, Mervi; Suomalainen, Soile; Guina, Mircea.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. SPIE, 2016. 97680Q (Proceedings of SPIE; Vuosikerta 9768).

Tutkimustuotos › › vertaisarvioitu

Harvard

Zia, N , Viheriälä, J, Koskinen, R, Koskinen, M, Suomalainen, S & Guina, M 2016, Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength. julkaisussa Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX., 97680Q, Proceedings of SPIE, Vuosikerta. 9768, SPIE, 1/01/00. https://doi.org/10.1117/12.2209720

APA

Zia, N., Viheriälä, J., Koskinen, R., Koskinen, M., Suomalainen, S., & Guina, M. (2016). Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength. teoksessa Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX [97680Q] (Proceedings of SPIE; Vuosikerta 9768). SPIE. https://doi.org/10.1117/12.2209720

Vancouver

Zia N , Viheriälä J, Koskinen R, Koskinen M, Suomalainen S, Guina M. Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength. julkaisussa Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. SPIE. 2016. 97680Q. (Proceedings of SPIE). https://doi.org/10.1117/12.2209720

Author

Zia, Nouman ; Viheriälä, Jukka ; Koskinen, Riku ; Koskinen, Mervi ; Suomalainen, Soile ; Guina, Mircea. / Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. SPIE, 2016. (Proceedings of SPIE).

Bibtex - Lataa

@inproceedings{3ff3ce4646a64d73913a316d537ed3f7,

title = "Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength",

abstract = "Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.",

keywords = "Gallium antimonide, SLD design, Superluminescent diodes, Tilt waveguide",

author = "Nouman Zia and Jukka Viheri{\"a}l{\"a} and Riku Koskinen and Mervi Koskinen and Soile Suomalainen and Mircea Guina",

note = "INT=orc,{"}Koskinen, Mervi{"}",

year = "2016",

doi = "10.1117/12.2209720",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

booktitle = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX",

address = "United States",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength

AU - Zia, Nouman

AU - Viheriälä, Jukka

AU - Koskinen, Riku

AU - Koskinen, Mervi

AU - Suomalainen, Soile

AU - Guina, Mircea

N1 - INT=orc,"Koskinen, Mervi"

PY - 2016

Y1 - 2016

N2 - Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.

AB - Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.

KW - Gallium antimonide

KW - SLD design

KW - Superluminescent diodes

KW - Tilt waveguide

U2 - 10.1117/12.2209720

DO - 10.1117/12.2209720

M3 - Conference contribution

T3 - Proceedings of SPIE

BT - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX

PB - SPIE

ER -

TUTCRIS