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Fully printed memristors for a self-sustainable recorder of mechanical energy

Tutkimustuotosvertaisarvioitu

Standard

Fully printed memristors for a self-sustainable recorder of mechanical energy. / Vilmi, Pauliina; Nelo, Mikko; Voutilainen, Juha-Veikko; Palosaari, Jaakko; Pörhönen, Juho; Tuukkanen, Sampo; Jantunen, Heli; Juuti, Jari; Fabritius, Tapio.

julkaisussa: Flexible and Printed Electronics, Vuosikerta 1, Nro 2, 025002, 19.04.2016.

Tutkimustuotosvertaisarvioitu

Harvard

Vilmi, P, Nelo, M, Voutilainen, J-V, Palosaari, J, Pörhönen, J, Tuukkanen, S, Jantunen, H, Juuti, J & Fabritius, T 2016, 'Fully printed memristors for a self-sustainable recorder of mechanical energy', Flexible and Printed Electronics, Vuosikerta. 1, Nro 2, 025002. https://doi.org/10.1088/2058-8585/1/2/025002

APA

Vilmi, P., Nelo, M., Voutilainen, J-V., Palosaari, J., Pörhönen, J., Tuukkanen, S., ... Fabritius, T. (2016). Fully printed memristors for a self-sustainable recorder of mechanical energy. Flexible and Printed Electronics, 1(2), [025002]. https://doi.org/10.1088/2058-8585/1/2/025002

Vancouver

Vilmi P, Nelo M, Voutilainen J-V, Palosaari J, Pörhönen J, Tuukkanen S et al. Fully printed memristors for a self-sustainable recorder of mechanical energy. Flexible and Printed Electronics. 2016 huhti 19;1(2). 025002. https://doi.org/10.1088/2058-8585/1/2/025002

Author

Vilmi, Pauliina ; Nelo, Mikko ; Voutilainen, Juha-Veikko ; Palosaari, Jaakko ; Pörhönen, Juho ; Tuukkanen, Sampo ; Jantunen, Heli ; Juuti, Jari ; Fabritius, Tapio. / Fully printed memristors for a self-sustainable recorder of mechanical energy. Julkaisussa: Flexible and Printed Electronics. 2016 ; Vuosikerta 1, Nro 2.

Bibtex - Lataa

@article{6d678e3c10e04f0ea4597969e3354306,
title = "Fully printed memristors for a self-sustainable recorder of mechanical energy",
abstract = "Memristors have attracted significant interest in recent years because of their role as a missing electronic component and unique functionality that has not previously existed. Since the first discoveries of the existence of memristive materials, various different fabrication processes for memristors have been presented. Here, a simple additive fabrication process is demonstrated where memristors were deposited on a polymer substrate by conventional inkjet printing. The memristor structure was printed on a 125 μ m thick polyethylene terephthalate (PET) substrate by sandwiching a thin layer of TiO x between two silver nanoparticle ink electrodes. Current–voltage ( IV ) characterization measurements were performed and they showed clear memristive behavior when voltage pulse amplitude varied between −1.5 V and 1.5 V. The corresponding resistance change is approximately between 150 Ω and 75 kΩ. In order to demonstrate the switching scheme in practical application, printed memristors and a printed voltage doubler were connected with a piezoelectric element. The element was subjected to impact-type excitation thus producing an electric charge that was able to switch the memristor between high and low resistive states. These results pave the way for an exploitation of cost-efficient, self-sufficient, all-printable memory elements for wide utilization in future electronics applications.",
author = "Pauliina Vilmi and Mikko Nelo and Juha-Veikko Voutilainen and Jaakko Palosaari and Juho P{\"o}rh{\"o}nen and Sampo Tuukkanen and Heli Jantunen and Jari Juuti and Tapio Fabritius",
year = "2016",
month = "4",
day = "19",
doi = "10.1088/2058-8585/1/2/025002",
language = "English",
volume = "1",
journal = "Flexible and Printed Electronics",
issn = "2058-8585",
publisher = "IOP Publishing",
number = "2",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Fully printed memristors for a self-sustainable recorder of mechanical energy

AU - Vilmi, Pauliina

AU - Nelo, Mikko

AU - Voutilainen, Juha-Veikko

AU - Palosaari, Jaakko

AU - Pörhönen, Juho

AU - Tuukkanen, Sampo

AU - Jantunen, Heli

AU - Juuti, Jari

AU - Fabritius, Tapio

PY - 2016/4/19

Y1 - 2016/4/19

N2 - Memristors have attracted significant interest in recent years because of their role as a missing electronic component and unique functionality that has not previously existed. Since the first discoveries of the existence of memristive materials, various different fabrication processes for memristors have been presented. Here, a simple additive fabrication process is demonstrated where memristors were deposited on a polymer substrate by conventional inkjet printing. The memristor structure was printed on a 125 μ m thick polyethylene terephthalate (PET) substrate by sandwiching a thin layer of TiO x between two silver nanoparticle ink electrodes. Current–voltage ( IV ) characterization measurements were performed and they showed clear memristive behavior when voltage pulse amplitude varied between −1.5 V and 1.5 V. The corresponding resistance change is approximately between 150 Ω and 75 kΩ. In order to demonstrate the switching scheme in practical application, printed memristors and a printed voltage doubler were connected with a piezoelectric element. The element was subjected to impact-type excitation thus producing an electric charge that was able to switch the memristor between high and low resistive states. These results pave the way for an exploitation of cost-efficient, self-sufficient, all-printable memory elements for wide utilization in future electronics applications.

AB - Memristors have attracted significant interest in recent years because of their role as a missing electronic component and unique functionality that has not previously existed. Since the first discoveries of the existence of memristive materials, various different fabrication processes for memristors have been presented. Here, a simple additive fabrication process is demonstrated where memristors were deposited on a polymer substrate by conventional inkjet printing. The memristor structure was printed on a 125 μ m thick polyethylene terephthalate (PET) substrate by sandwiching a thin layer of TiO x between two silver nanoparticle ink electrodes. Current–voltage ( IV ) characterization measurements were performed and they showed clear memristive behavior when voltage pulse amplitude varied between −1.5 V and 1.5 V. The corresponding resistance change is approximately between 150 Ω and 75 kΩ. In order to demonstrate the switching scheme in practical application, printed memristors and a printed voltage doubler were connected with a piezoelectric element. The element was subjected to impact-type excitation thus producing an electric charge that was able to switch the memristor between high and low resistive states. These results pave the way for an exploitation of cost-efficient, self-sufficient, all-printable memory elements for wide utilization in future electronics applications.

U2 - 10.1088/2058-8585/1/2/025002

DO - 10.1088/2058-8585/1/2/025002

M3 - Article

VL - 1

JO - Flexible and Printed Electronics

JF - Flexible and Printed Electronics

SN - 2058-8585

IS - 2

M1 - 025002

ER -