TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut274-278
Sivumäärä5
JulkaisuOptical Materials
Vuosikerta91
DOI - pysyväislinkit
TilaJulkaistu - 1 toukokuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

In this paper, we present results of Fourier-transformed photoluminescence measurements of quaternary GaInAsSb quantum wells with quinary AlGaInAsSb barriers grown on GaSb substrate, designed for spectral range of mid-infrared. Here, we show an emission shift towards longer wavelength as a result of incorporation of indium into the quantum wells reaching up to 3 μm at room temperature (RT). Additionally, we have observed an additional low-energy photoluminescence signal with maximum wavelength of 3.5 μm at RT, which we have attributed as states localised on the layer interfaces. The activation energy of carriers trapped in those states is estimated to be 35 meV.