TUTCRIS - Tampereen teknillinen yliopisto


GaSb superluminescent diodes with broadband emission at 2.55 μ m



JulkaisuApplied Physics Letters
DOI - pysyväislinkit
TilaJulkaistu - tammikuuta 2018
OKM-julkaisutyyppiA1 Alkuperäisartikkeli


We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

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