TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

Tutkimustuotosvertaisarvioitu

Standard

Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. / Kotilainen, Minna; Krumpolec, Richard; Franta, Daniel; Souček, Pavel; Homola, Tomáš; Cameron, David C.; Vuoristo, Petri.

julkaisussa: Solar Energy Materials and Solar Cells, Vuosikerta 166, 01.07.2017, s. 140-146.

Tutkimustuotosvertaisarvioitu

Harvard

Kotilainen, M, Krumpolec, R, Franta, D, Souček, P, Homola, T, Cameron, DC & Vuoristo, P 2017, 'Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers', Solar Energy Materials and Solar Cells, Vuosikerta. 166, Sivut 140-146. https://doi.org/10.1016/j.solmat.2017.02.033

APA

Kotilainen, M., Krumpolec, R., Franta, D., Souček, P., Homola, T., Cameron, D. C., & Vuoristo, P. (2017). Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. Solar Energy Materials and Solar Cells, 166, 140-146. https://doi.org/10.1016/j.solmat.2017.02.033

Vancouver

Kotilainen M, Krumpolec R, Franta D, Souček P, Homola T, Cameron DC et al. Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. Solar Energy Materials and Solar Cells. 2017 heinä 1;166:140-146. https://doi.org/10.1016/j.solmat.2017.02.033

Author

Kotilainen, Minna ; Krumpolec, Richard ; Franta, Daniel ; Souček, Pavel ; Homola, Tomáš ; Cameron, David C. ; Vuoristo, Petri. / Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. Julkaisussa: Solar Energy Materials and Solar Cells. 2017 ; Vuosikerta 166. Sivut 140-146.

Bibtex - Lataa

@article{bc587199409d4425863d6c8a3f31cb85,
title = "Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers",
abstract = "The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.",
keywords = "Copper diffusion, Diffusion barrier, HfO thin film, Solar absorber, Thermal ageing",
author = "Minna Kotilainen and Richard Krumpolec and Daniel Franta and Pavel Souček and Tom{\'a}š Homola and Cameron, {David C.} and Petri Vuoristo",
year = "2017",
month = "7",
day = "1",
doi = "10.1016/j.solmat.2017.02.033",
language = "English",
volume = "166",
pages = "140--146",
journal = "Solar materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

AU - Kotilainen, Minna

AU - Krumpolec, Richard

AU - Franta, Daniel

AU - Souček, Pavel

AU - Homola, Tomáš

AU - Cameron, David C.

AU - Vuoristo, Petri

PY - 2017/7/1

Y1 - 2017/7/1

N2 - The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.

AB - The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.

KW - Copper diffusion

KW - Diffusion barrier

KW - HfO thin film

KW - Solar absorber

KW - Thermal ageing

U2 - 10.1016/j.solmat.2017.02.033

DO - 10.1016/j.solmat.2017.02.033

M3 - Article

VL - 166

SP - 140

EP - 146

JO - Solar materials and Solar Cells

JF - Solar materials and Solar Cells

SN - 0927-0248

ER -