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TUTCRIS

High efficiency dilute nitride solar cells: Simulations meet experiments

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli8
Sivut113-132
Sivumäärä20
JulkaisuJournal of Green Engineering
Vuosikerta5
Numero3-4
DOI - pysyväislinkit
TilaJulkaistu - 2016
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-i-n solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-i-n solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.