TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

High efficiency dilute nitride solar cells: Simulations meet experiments

Tutkimustuotosvertaisarvioitu

Standard

High efficiency dilute nitride solar cells : Simulations meet experiments. / Tukiainen, A.; Aho, A.; Polojärvi, V.; Ahorinta, R.; Guina, M.

julkaisussa: Journal of Green Engineering, Vuosikerta 5, Nro 3-4, 8, 2016, s. 113-132.

Tutkimustuotosvertaisarvioitu

Harvard

APA

Vancouver

Author

Tukiainen, A. ; Aho, A. ; Polojärvi, V. ; Ahorinta, R. ; Guina, M. / High efficiency dilute nitride solar cells : Simulations meet experiments. Julkaisussa: Journal of Green Engineering. 2016 ; Vuosikerta 5, Nro 3-4. Sivut 113-132.

Bibtex - Lataa

@article{3d4f7166534c42fc82998833b6d87fcd,
title = "High efficiency dilute nitride solar cells: Simulations meet experiments",
abstract = "Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-i-n solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-i-n solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.",
author = "A. Tukiainen and A. Aho and V. Poloj{\"a}rvi and R. Ahorinta and M. Guina",
year = "2016",
doi = "10.13052/jge1904-4720.5348",
language = "English",
volume = "5",
pages = "113--132",
journal = "Journal of Green Engineering",
issn = "2245-4586",
publisher = "River Publishers",
number = "3-4",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - High efficiency dilute nitride solar cells

T2 - Simulations meet experiments

AU - Tukiainen, A.

AU - Aho, A.

AU - Polojärvi, V.

AU - Ahorinta, R.

AU - Guina, M.

PY - 2016

Y1 - 2016

N2 - Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-i-n solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-i-n solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.

AB - Parameter extraction procedure and simulation of dilute nitride solar cells are reported. Using PC1D simulation and fitting to experimental current-voltage and external quantum efficiency data, we retrieve the phenomenological material parameters for GaInNAs solar cells. Based on these, we have constructed a model that can explain the changes in short circuit current and open circuit voltage of n-i-p solar cells subjected to rapid thermal annealing. The model reveals that non-annealed MBE-grown GaInNAs material has an n-type doping that evolves to p-type upon rapid thermal annealing. The change of doping type and the shift of the physical location of the pn-junction were confirmed by Kelvin-probe force microscopy. The PC1D modelling was found to work well also for GaInNAs p-i-n solar cells with opposite polarity. It was also found that the GaInNAs lower doping levels in p-i-n solar cells grown at lowered As/III flux ratios were associated with increased carrier lifetimes.

UR - http://www.scopus.com/inward/record.url?scp=84983050025&partnerID=8YFLogxK

U2 - 10.13052/jge1904-4720.5348

DO - 10.13052/jge1904-4720.5348

M3 - Article

VL - 5

SP - 113

EP - 132

JO - Journal of Green Engineering

JF - Journal of Green Engineering

SN - 2245-4586

IS - 3-4

M1 - 8

ER -