TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding

Tutkimustuotosvertaisarvioitu

Standard

High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding. / Hallman, Lauri W.; Ryvkin, Boris S.; Avrutin, Eugene A.; Aho, Antti T.; Viheriälä, Jukka; Guina, Mircea; Kostamovaara, Juha T.

julkaisussa: IEEE Photonics Technology Letters, Vuosikerta 31, Nro 20, 15.10.2019, s. 1635-1638.

Tutkimustuotosvertaisarvioitu

Harvard

Hallman, LW, Ryvkin, BS, Avrutin, EA, Aho, AT, Viheriälä, J, Guina, M & Kostamovaara, JT 2019, 'High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding', IEEE Photonics Technology Letters, Vuosikerta. 31, Nro 20, Sivut 1635-1638. https://doi.org/10.1109/LPT.2019.2940231

APA

Hallman, L. W., Ryvkin, B. S., Avrutin, E. A., Aho, A. T., Viheriälä, J., Guina, M., & Kostamovaara, J. T. (2019). High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding. IEEE Photonics Technology Letters, 31(20), 1635-1638. https://doi.org/10.1109/LPT.2019.2940231

Vancouver

Author

Hallman, Lauri W. ; Ryvkin, Boris S. ; Avrutin, Eugene A. ; Aho, Antti T. ; Viheriälä, Jukka ; Guina, Mircea ; Kostamovaara, Juha T. / High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding. Julkaisussa: IEEE Photonics Technology Letters. 2019 ; Vuosikerta 31, Nro 20. Sivut 1635-1638.

Bibtex - Lataa

@article{462f2425493740f09856a79d1440c472,
title = "High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding",
abstract = "We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 lm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 lm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.",
author = "Hallman, {Lauri W.} and Ryvkin, {Boris S.} and Avrutin, {Eugene A.} and Aho, {Antti T.} and Jukka Viheri{\"a}l{\"a} and Mircea Guina and Kostamovaara, {Juha T.}",
year = "2019",
month = "10",
day = "15",
doi = "10.1109/LPT.2019.2940231",
language = "English",
volume = "31",
pages = "1635--1638",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers",
number = "20",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding

AU - Hallman, Lauri W.

AU - Ryvkin, Boris S.

AU - Avrutin, Eugene A.

AU - Aho, Antti T.

AU - Viheriälä, Jukka

AU - Guina, Mircea

AU - Kostamovaara, Juha T.

PY - 2019/10/15

Y1 - 2019/10/15

N2 - We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 lm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 lm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.

AB - We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 lm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 lm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.

U2 - 10.1109/LPT.2019.2940231

DO - 10.1109/LPT.2019.2940231

M3 - Article

VL - 31

SP - 1635

EP - 1638

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 20

ER -