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High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

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Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli081104
Sivumäärä4
JulkaisuApplied Physics Letters
Vuosikerta115
Numero8
DOI - pysyväislinkit
TilaJulkaistu - 22 elokuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

A high-power superluminescent diode emitting over 400 mW in the 1.2 μm range is reported. The active region is based on a single GaInNAs/GaAs quantum well positioned within a low-confinement vertical waveguide and a lateral ridge waveguide geometry, ensuring single transverse mode operation. The peak wall-plug efficiency and the differential efficiency in the linear region were 22.8% and 0.38 W/A, respectively. The full width at half-maximum spectral width for the maximum output power was 22 nm, corresponding to a spectral power density of 19 mW/nm, a threefold increase compared to continuous wave superluminescent diodes based on a quantum dot active region operating in the same wavelength range. Besides exhibiting excellent optical and electrical properties, the GaInNAs active region enhances operation at elevated temperatures. In this respect, an output power of about 210 mW is demonstrated at operation temperatures as high as 60 °C, while 150 mW is still emitted at 70 °C. The unique combination of parameters demonstrated makes these GaInNAs QW-based superluminescent diodes particularly attractive for hybrid integration with silicon photonic circuitry, enabling the demonstration of compact solutions for sensing, optical coherence tomography, and other emerging concepts exploiting photonic integration technology and requiring single transversal mode operation, good efficiency, broadband high spectral power density, and uncooled operation at elevated temperatures.

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