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High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

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Yksityiskohdat

AlkuperäiskieliEnglanti
ArtikkeliPIP2784
Sivut914-919
Sivumäärä6
JulkaisuProgress in Photovoltaics: Research and Applications
Vuosikerta24
Numero7
DOI - pysyväislinkit
TilaJulkaistu - 17 kesäkuuta 2016
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of ~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions.

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