TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

High-performance SIMD implementation of the lattice-Boltzmann method on the Xeon Phi processor

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkelie5072
Sivumäärä16
JulkaisuConcurrency Computation
Vuosikerta31
Numero13
DOI - pysyväislinkit
TilaJulkaistu - 10 heinäkuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We present a high-performance implementation of the lattice-Boltzmann method (LBM) on the Knights Landing generation of Xeon Phi. The Knights Landing architecture includes 16GB of high-speed memory (MCDRAM) with a reported bandwidth of over 400 GB/s, and a subset of the AVX-512 single instruction multiple data (SIMD) instruction set. We explain five critical implementation aspects for high performance on this architecture: (1) the choice of appropriate LBM algorithm, (2) suitable data layout, (3) vectorization of the computation, (4) data prefetching, and (5) running our LBM simulations exclusively from the MCDRAM. The effects of these implementation aspects on the computational performance are demonstrated with the lattice-Boltzmann scheme involving the D3Q19 discrete velocity set and the TRT collision operator. In our benchmark simulations of fluid flow through porous media, using double-precision floating-point arithmetic, the observed performance exceeds 960 million fluid lattice site updates per second.