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High-Power 1180-nm GaInNAs DBR Laser Diodes

Tutkimustuotos: vertaisarvioituArtikkeli

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut2023-2026
Sivumäärä4
JulkaisuIEEE Photonics Technology Letters
Vuosikerta29
Lehden numero23
DOI - pysyväislinkit
TilaJulkaistu - 1 joulukuuta 2017
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We report high-power 1180-nm GaInNAs distributed Bragg reflector laser diodes with and without a tapered amplifying section. The untapered and tapered components reached room temperature output powers of 655 mW and 4.04 W, respectively. The diodes exhibited narrow linewidth emission with side-mode suppression ratios in the range of 50 dB for a broad range of operating current, extending up to 2 A for the untapered component and 10 A for the tapered component. The high output power is rendered possible by the use of a high quality GaInNAs-based quantum well gain region, which allows for lower strain and better carrier confinement compared with traditional GaInAs quantum wells. The development opens new opportunities for the power scaling of frequency-doubled lasers with emission at yellow–orange wavelengths.

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