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InAs/InP quantum dot VECSEL emitting at 1.5 μ m

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Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli171105
JulkaisuApplied Physics Letters
Vuosikerta115
Numero17
DOI - pysyväislinkit
TilaJulkaistu - 21 lokakuuta 2019
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media.

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