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InAs/InP quantum dot VECSEL emitting at 1.5 μ m

Tutkimustuotosvertaisarvioitu

Standard

InAs/InP quantum dot VECSEL emitting at 1.5 μ m. / Nechay, K.; Mereuta, A.; Paranthoen, C.; Brévalle, G.; Levallois, C.; Alouini, M.; Chevalier, N.; Perrin, M.; Suruceanu, G.; Caliman, A.; Guina, M.; Kapon, E.

julkaisussa: Applied Physics Letters, Vuosikerta 115, Nro 17, 171105, 21.10.2019.

Tutkimustuotosvertaisarvioitu

Harvard

Nechay, K, Mereuta, A, Paranthoen, C, Brévalle, G, Levallois, C, Alouini, M, Chevalier, N, Perrin, M, Suruceanu, G, Caliman, A, Guina, M & Kapon, E 2019, 'InAs/InP quantum dot VECSEL emitting at 1.5 μ m', Applied Physics Letters, Vuosikerta. 115, Nro 17, 171105. https://doi.org/10.1063/1.5125632

APA

Nechay, K., Mereuta, A., Paranthoen, C., Brévalle, G., Levallois, C., Alouini, M., ... Kapon, E. (2019). InAs/InP quantum dot VECSEL emitting at 1.5 μ m. Applied Physics Letters, 115(17), [171105]. https://doi.org/10.1063/1.5125632

Vancouver

Nechay K, Mereuta A, Paranthoen C, Brévalle G, Levallois C, Alouini M et al. InAs/InP quantum dot VECSEL emitting at 1.5 μ m. Applied Physics Letters. 2019 loka 21;115(17). 171105. https://doi.org/10.1063/1.5125632

Author

Nechay, K. ; Mereuta, A. ; Paranthoen, C. ; Brévalle, G. ; Levallois, C. ; Alouini, M. ; Chevalier, N. ; Perrin, M. ; Suruceanu, G. ; Caliman, A. ; Guina, M. ; Kapon, E. / InAs/InP quantum dot VECSEL emitting at 1.5 μ m. Julkaisussa: Applied Physics Letters. 2019 ; Vuosikerta 115, Nro 17.

Bibtex - Lataa

@article{525f1ea6603d415e8c1ae91f8320191e,
title = "InAs/InP quantum dot VECSEL emitting at 1.5 μ m",
abstract = "A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media.",
author = "K. Nechay and A. Mereuta and C. Paranthoen and G. Br{\'e}valle and C. Levallois and M. Alouini and N. Chevalier and M. Perrin and G. Suruceanu and A. Caliman and M. Guina and E. Kapon",
year = "2019",
month = "10",
day = "21",
doi = "10.1063/1.5125632",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "17",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - InAs/InP quantum dot VECSEL emitting at 1.5 μ m

AU - Nechay, K.

AU - Mereuta, A.

AU - Paranthoen, C.

AU - Brévalle, G.

AU - Levallois, C.

AU - Alouini, M.

AU - Chevalier, N.

AU - Perrin, M.

AU - Suruceanu, G.

AU - Caliman, A.

AU - Guina, M.

AU - Kapon, E.

PY - 2019/10/21

Y1 - 2019/10/21

N2 - A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media.

AB - A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media.

U2 - 10.1063/1.5125632

DO - 10.1063/1.5125632

M3 - Article

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 171105

ER -