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InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

Tutkimustuotosvertaisarvioitu

Standard

InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency. / Zhang, G.; Näppi, J.; Vänttinen, K.; Asonen, H.; Pessa, M.

julkaisussa: Electronics Letters, Vuosikerta 28, Nro 6, 1992, s. 595-597.

Tutkimustuotosvertaisarvioitu

Harvard

Zhang, G, Näppi, J, Vänttinen, K, Asonen, H & Pessa, M 1992, 'InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency', Electronics Letters, Vuosikerta. 28, Nro 6, Sivut 595-597. https://doi.org/10.1049/el:19920375

APA

Zhang, G., Näppi, J., Vänttinen, K., Asonen, H., & Pessa, M. (1992). InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency. Electronics Letters, 28(6), 595-597. https://doi.org/10.1049/el:19920375

Vancouver

Zhang G, Näppi J, Vänttinen K, Asonen H, Pessa M. InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency. Electronics Letters. 1992;28(6):595-597. https://doi.org/10.1049/el:19920375

Author

Zhang, G. ; Näppi, J. ; Vänttinen, K. ; Asonen, H. ; Pessa, M. / InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency. Julkaisussa: Electronics Letters. 1992 ; Vuosikerta 28, Nro 6. Sivut 595-597.

Bibtex - Lataa

@article{ca6fc8dd59b24bf08bacd0c617a5d63a,
title = "InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency",
author = "G. Zhang and J. N{\"a}ppi and K. V{\"a}nttinen and H. Asonen and M. Pessa",
note = "Contribution: organisation=fys,FACT1=1",
year = "1992",
doi = "10.1049/el:19920375",
language = "English",
volume = "28",
pages = "595--597",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "6",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

AU - Zhang, G.

AU - Näppi, J.

AU - Vänttinen, K.

AU - Asonen, H.

AU - Pessa, M.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1992

Y1 - 1992

U2 - 10.1049/el:19920375

DO - 10.1049/el:19920375

M3 - Article

VL - 28

SP - 595

EP - 597

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 6

ER -