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TUTCRIS

Investigation of the growth regimes in GaSbBi alloys with high Bi content by combinatorial MBE

Tutkimustuotos: Konferenssiesitys, posteri tai abstrakti

Yksityiskohdat

AlkuperäiskieliEnglanti
TilaJulkaistu - 5 syyskuuta 2018
TapahtumaICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy - Shanghai, Kiina
Kesto: 2 syyskuuta 20187 syyskuuta 2018
http://mbe2018.csp.escience.cn/dct/page/1

Conference

ConferenceICMBE 2018 - the 20th International Conference on Molecular beam Epitaxy
MaaKiina
KaupunkiShanghai
Ajanjakso2/09/187/09/18
www-osoite

Tiivistelmä

We investigate the relationship between growth parameters and resulting material properties of high Bi content (0 < x < 14.8%) GaSb(1-x)Bi(x) alloys using a combinatorial approach. In this approach, we utilize the non-uniformity of the MBE sources using stationary (non-rotating substrate) growth, which allows to map a wide range of flux conditions in a single growth run. In particular, we show that the Sb/Ga flux ratio is key in controlling Bi incorporation and crystalline/surface quality, and discuss the growth window where these properties are optimal. We further explore this window and study the influence of the growth temperature, Bi-flux, and growth rate.

Tutkimusalat