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TUTCRIS

Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cells

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli110787
Sivumäärä5
JulkaisuSolar Energy Materials and Solar Cells
Vuosikerta219
DOI - pysyväislinkit
TilaE-pub ahead of print - 2020
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We have fabricated luminescent (Er,Ho)2O3 thin films by atomic layer deposition (ALD) and studied their capability to enhance the performance of state-of-the-art single-junction c-Si bifacial solar cells. The films convert IR photons (e.g. 1523 nm) by three- and two-photon upconversion process to emit visible-light in the 400–700 nm range. When the films were coupled with solar cells, ~3% improvement in the short-circuit current density (620 ± 5 to 638 ± 5 mAcm−2) was recorded under a simulated solar excitation equivalent to 16 suns. These findings highlight a potential of ALD for the design and fabrication of luminescent coatings for practical solar cell devices.