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MECSELs with direct emission in the 760 nm to 810 nm spectral range: A single- and double-side pumping comparison and high-power continuous-wave operation

Tutkimustuotosvertaisarvioitu

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MECSELs with direct emission in the 760 nm to 810 nm spectral range : A single- and double-side pumping comparison and high-power continuous-wave operation. / Kahle, Hermann; Penttinen, Jussi Pekka; Phung, Hoy My; Rajala, Patrik; Tukiainen, Antti; Ranta, Sanna; Guina, Mircea.

Vertical External Cavity Surface Emitting Lasers (VECSELs) IX. toim. / Ursula Keller. SPIE, IEEE, 2019. 109010D (Proceedings of SPIE - The International Society for Optical Engineering; Vuosikerta 10901).

Tutkimustuotosvertaisarvioitu

Harvard

Kahle, H, Penttinen, JP, Phung, HM, Rajala, P, Tukiainen, A, Ranta, S & Guina, M 2019, MECSELs with direct emission in the 760 nm to 810 nm spectral range: A single- and double-side pumping comparison and high-power continuous-wave operation. julkaisussa U Keller (Toimittaja), Vertical External Cavity Surface Emitting Lasers (VECSELs) IX., 109010D, Proceedings of SPIE - The International Society for Optical Engineering, Vuosikerta. 10901, SPIE, IEEE, San Francisco, Yhdysvallat, 5/02/19. https://doi.org/10.1117/12.2512111

APA

Kahle, H., Penttinen, J. P., Phung, H. M., Rajala, P., Tukiainen, A., Ranta, S., & Guina, M. (2019). MECSELs with direct emission in the 760 nm to 810 nm spectral range: A single- and double-side pumping comparison and high-power continuous-wave operation. teoksessa U. Keller (Toimittaja), Vertical External Cavity Surface Emitting Lasers (VECSELs) IX [109010D] (Proceedings of SPIE - The International Society for Optical Engineering; Vuosikerta 10901). SPIE, IEEE. https://doi.org/10.1117/12.2512111

Vancouver

Kahle H, Penttinen JP, Phung HM, Rajala P, Tukiainen A, Ranta S et al. MECSELs with direct emission in the 760 nm to 810 nm spectral range: A single- and double-side pumping comparison and high-power continuous-wave operation. julkaisussa Keller U, toimittaja, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX. SPIE, IEEE. 2019. 109010D. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2512111

Author

Kahle, Hermann ; Penttinen, Jussi Pekka ; Phung, Hoy My ; Rajala, Patrik ; Tukiainen, Antti ; Ranta, Sanna ; Guina, Mircea. / MECSELs with direct emission in the 760 nm to 810 nm spectral range : A single- and double-side pumping comparison and high-power continuous-wave operation. Vertical External Cavity Surface Emitting Lasers (VECSELs) IX. Toimittaja / Ursula Keller. SPIE, IEEE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).

Bibtex - Lataa

@inproceedings{5a2adabc5c904255b2998305d66853a1,
title = "MECSELs with direct emission in the 760 nm to 810 nm spectral range: A single- and double-side pumping comparison and high-power continuous-wave operation",
abstract = "We compared single-side pumping (SSP) and double-side pumping (DSP) of a semiconductor membrane external-cavity surface-emitting laser (MECSEL). The MECSEL's active region was based on a 4×3 AlGaAs quantum well (QW) structure. This structure was embedded between two silicon carbide (SiC) wafer pieces that were used as transparent intra-cavity (IC) heat spreaders creating a symmetrical cooling environment. The MECSEL structure targeted emission at 780nm and was operated at 20°C heat sink temperature. Via DSP the differential efficiency was improved from 31.9{\%} to 34.4 {\%}. The laser threshold was reduced from 0.79 W to 0.69 W of absorbed pump power while the maximum output power was increased from 3.13 W to 3.22 W. The DSP configuration enabled these improvements by a reduced thermal resistance of the gain element by 9 {\%}. The MECSEL operated at a fundamental Gaussian TEM00 mode profile and the beam quality was measured to be M2 <1.09. We further demonstrate a maximum tuning range from 767 nm to 811 nm. A similar active region with about half the thickness (2×3 AlGaAs QWs) was investigated using the DSP configuration and first results are presented here. 500-μm-thick sapphire IC heat spreaders were used instead of SiC. The output power exceeded 0.5W and the emission was spectrally located around 770 nm.",
keywords = "AlGaAs, DBR-free, MECSEL, Near infra-red, Thermal management, Thermal resistance, VECSEL",
author = "Hermann Kahle and Penttinen, {Jussi Pekka} and Phung, {Hoy My} and Patrik Rajala and Antti Tukiainen and Sanna Ranta and Mircea Guina",
note = "INT=phys,{"}Rajala, Patrik{"} jufoid=71479",
year = "2019",
doi = "10.1117/12.2512111",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE, IEEE",
editor = "Ursula Keller",
booktitle = "Vertical External Cavity Surface Emitting Lasers (VECSELs) IX",

}

RIS (suitable for import to EndNote) - Lataa

TY - GEN

T1 - MECSELs with direct emission in the 760 nm to 810 nm spectral range

T2 - A single- and double-side pumping comparison and high-power continuous-wave operation

AU - Kahle, Hermann

AU - Penttinen, Jussi Pekka

AU - Phung, Hoy My

AU - Rajala, Patrik

AU - Tukiainen, Antti

AU - Ranta, Sanna

AU - Guina, Mircea

N1 - INT=phys,"Rajala, Patrik" jufoid=71479

PY - 2019

Y1 - 2019

N2 - We compared single-side pumping (SSP) and double-side pumping (DSP) of a semiconductor membrane external-cavity surface-emitting laser (MECSEL). The MECSEL's active region was based on a 4×3 AlGaAs quantum well (QW) structure. This structure was embedded between two silicon carbide (SiC) wafer pieces that were used as transparent intra-cavity (IC) heat spreaders creating a symmetrical cooling environment. The MECSEL structure targeted emission at 780nm and was operated at 20°C heat sink temperature. Via DSP the differential efficiency was improved from 31.9% to 34.4 %. The laser threshold was reduced from 0.79 W to 0.69 W of absorbed pump power while the maximum output power was increased from 3.13 W to 3.22 W. The DSP configuration enabled these improvements by a reduced thermal resistance of the gain element by 9 %. The MECSEL operated at a fundamental Gaussian TEM00 mode profile and the beam quality was measured to be M2 <1.09. We further demonstrate a maximum tuning range from 767 nm to 811 nm. A similar active region with about half the thickness (2×3 AlGaAs QWs) was investigated using the DSP configuration and first results are presented here. 500-μm-thick sapphire IC heat spreaders were used instead of SiC. The output power exceeded 0.5W and the emission was spectrally located around 770 nm.

AB - We compared single-side pumping (SSP) and double-side pumping (DSP) of a semiconductor membrane external-cavity surface-emitting laser (MECSEL). The MECSEL's active region was based on a 4×3 AlGaAs quantum well (QW) structure. This structure was embedded between two silicon carbide (SiC) wafer pieces that were used as transparent intra-cavity (IC) heat spreaders creating a symmetrical cooling environment. The MECSEL structure targeted emission at 780nm and was operated at 20°C heat sink temperature. Via DSP the differential efficiency was improved from 31.9% to 34.4 %. The laser threshold was reduced from 0.79 W to 0.69 W of absorbed pump power while the maximum output power was increased from 3.13 W to 3.22 W. The DSP configuration enabled these improvements by a reduced thermal resistance of the gain element by 9 %. The MECSEL operated at a fundamental Gaussian TEM00 mode profile and the beam quality was measured to be M2 <1.09. We further demonstrate a maximum tuning range from 767 nm to 811 nm. A similar active region with about half the thickness (2×3 AlGaAs QWs) was investigated using the DSP configuration and first results are presented here. 500-μm-thick sapphire IC heat spreaders were used instead of SiC. The output power exceeded 0.5W and the emission was spectrally located around 770 nm.

KW - AlGaAs

KW - DBR-free

KW - MECSEL

KW - Near infra-red

KW - Thermal management

KW - Thermal resistance

KW - VECSEL

U2 - 10.1117/12.2512111

DO - 10.1117/12.2512111

M3 - Conference contribution

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Vertical External Cavity Surface Emitting Lasers (VECSELs) IX

A2 - Keller, Ursula

PB - SPIE, IEEE

ER -