TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Micro-Raman characterization of Germanium thin films evaporated on various substrates

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut492-495
Sivumäärä4
JulkaisuMicroelectronic Engineering
Vuosikerta88
Numero4
DOI - pysyväislinkit
TilaJulkaistu - huhtikuuta 2011
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We perform an extensive micro-Raman analysis of Germanium thin films physically evaporated on several substrates including silicon, silicon oxide and glass. We investigate the dependence of crystal quality on thin film deposition parameters such as substrate temperature and growth rate. We also study the continuous transitional change of the material structure from amorphous to crystalline phases. Ge films obtained by this simple and low cost technique are a viable solution towards the realization of virtual substrates and devices.