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Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface

Tutkimustuotosvertaisarvioitu

Standard

Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface. / Lampinen, J.; Nieminen, R. M.; Kaski, K.

julkaisussa: Surcface Science, Vuosikerta 2013, Nro 1-2, 1988, s. 201-211.

Tutkimustuotosvertaisarvioitu

Harvard

Lampinen, J, Nieminen, RM & Kaski, K 1988, 'Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface', Surcface Science, Vuosikerta. 2013, Nro 1-2, Sivut 201-211.

APA

Lampinen, J., Nieminen, R. M., & Kaski, K. (1988). Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface. Surcface Science, 2013(1-2), 201-211.

Vancouver

Lampinen J, Nieminen RM, Kaski K. Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface. Surcface Science. 1988;2013(1-2):201-211.

Author

Lampinen, J. ; Nieminen, R. M. ; Kaski, K. / Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface. Julkaisussa: Surcface Science. 1988 ; Vuosikerta 2013, Nro 1-2. Sivut 201-211.

Bibtex - Lataa

@article{d1dd7791e2eb4553a1315d6c03a25fe5,
title = "Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface",
author = "J. Lampinen and Nieminen, {R. M.} and K. Kaski",
note = "Contribution: organisation=ele,FACT1=1",
year = "1988",
language = "English",
volume = "2013",
pages = "201--211",
journal = "Surcface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-2",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Molecular Dynamics Simulation of Epitaxial Growth of the Si(001)Surface

AU - Lampinen, J.

AU - Nieminen, R. M.

AU - Kaski, K.

N1 - Contribution: organisation=ele,FACT1=1

PY - 1988

Y1 - 1988

M3 - Article

VL - 2013

SP - 201

EP - 211

JO - Surcface Science

JF - Surcface Science

SN - 0039-6028

IS - 1-2

ER -