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Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy

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Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut445-450
Sivumäärä6
JulkaisuThe journal of physical chemistry letters
Vuosikerta11
Numero2
Varhainen verkossa julkaisun päivämäärä20 joulukuuta 2019
DOI - pysyväislinkit
TilaJulkaistu - 2020
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

We have developed a new noninvasive optical method for monitoring charge carrier diffusion and mobility in semiconductor thin films in the direction perpendicular to the surface which is most relevant for devices. The method is based on standard transient absorption measurements carried out in reflectance and transmittance modes at wavelengths below the band gap where the transient response is mainly determined by the change in refractive index, which in turn depends on the distribution of photogenerated carriers across the film. This distribution is initially inhomogeneous because of absorption at the excitation wavelength and becomes uniform over time via diffusion. By modeling these phenomena we can determine the diffusion constant and respective mobility. Applying the method to a 500 nm thick triple cation FAMACs perovskite film revealed that homogeneous carrier distribution is established in few hundred picoseconds, which is consistent with mobility of 66 cm2 (V s)-1.

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