TUTCRIS - Tampereen teknillinen yliopisto

TUTCRIS

Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy

Tutkimustuotosvertaisarvioitu

Standard

Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy. / Pasanen, Hannu P.; Vivo, Paola; Canil, Laura; Hempel, Hannes; Unold, Thomas; Abate, Antonio; Tkachenko, Nikolai V.

julkaisussa: The journal of physical chemistry letters, Vuosikerta 11, Nro 2, 2020, s. 445-450.

Tutkimustuotosvertaisarvioitu

Harvard

Pasanen, HP, Vivo, P, Canil, L, Hempel, H, Unold, T, Abate, A & Tkachenko, NV 2020, 'Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy', The journal of physical chemistry letters, Vuosikerta. 11, Nro 2, Sivut 445-450. https://doi.org/10.1021/acs.jpclett.9b03427

APA

Vancouver

Pasanen HP, Vivo P, Canil L, Hempel H, Unold T, Abate A et al. Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy. The journal of physical chemistry letters. 2020;11(2):445-450. https://doi.org/10.1021/acs.jpclett.9b03427

Author

Pasanen, Hannu P. ; Vivo, Paola ; Canil, Laura ; Hempel, Hannes ; Unold, Thomas ; Abate, Antonio ; Tkachenko, Nikolai V. / Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy. Julkaisussa: The journal of physical chemistry letters. 2020 ; Vuosikerta 11, Nro 2. Sivut 445-450.

Bibtex - Lataa

@article{ebaf7604212946ae8d8f494b3e407603,
title = "Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy",
abstract = "We have developed a new noninvasive optical method for monitoring charge carrier diffusion and mobility in semiconductor thin films in the direction perpendicular to the surface which is most relevant for devices. The method is based on standard transient absorption measurements carried out in reflectance and transmittance modes at wavelengths below the band gap where the transient response is mainly determined by the change in refractive index, which in turn depends on the distribution of photogenerated carriers across the film. This distribution is initially inhomogeneous because of absorption at the excitation wavelength and becomes uniform over time via diffusion. By modeling these phenomena we can determine the diffusion constant and respective mobility. Applying the method to a 500 nm thick triple cation FAMACs perovskite film revealed that homogeneous carrier distribution is established in few hundred picoseconds, which is consistent with mobility of 66 cm2 (V s)-1.",
author = "Pasanen, {Hannu P.} and Paola Vivo and Laura Canil and Hannes Hempel and Thomas Unold and Antonio Abate and Tkachenko, {Nikolai V.}",
year = "2020",
doi = "10.1021/acs.jpclett.9b03427",
language = "English",
volume = "11",
pages = "445--450",
journal = "Journal of Physical Chemistry Letters",
issn = "1948-7185",
publisher = "American Chemical Society",
number = "2",

}

RIS (suitable for import to EndNote) - Lataa

TY - JOUR

T1 - Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy

AU - Pasanen, Hannu P.

AU - Vivo, Paola

AU - Canil, Laura

AU - Hempel, Hannes

AU - Unold, Thomas

AU - Abate, Antonio

AU - Tkachenko, Nikolai V.

PY - 2020

Y1 - 2020

N2 - We have developed a new noninvasive optical method for monitoring charge carrier diffusion and mobility in semiconductor thin films in the direction perpendicular to the surface which is most relevant for devices. The method is based on standard transient absorption measurements carried out in reflectance and transmittance modes at wavelengths below the band gap where the transient response is mainly determined by the change in refractive index, which in turn depends on the distribution of photogenerated carriers across the film. This distribution is initially inhomogeneous because of absorption at the excitation wavelength and becomes uniform over time via diffusion. By modeling these phenomena we can determine the diffusion constant and respective mobility. Applying the method to a 500 nm thick triple cation FAMACs perovskite film revealed that homogeneous carrier distribution is established in few hundred picoseconds, which is consistent with mobility of 66 cm2 (V s)-1.

AB - We have developed a new noninvasive optical method for monitoring charge carrier diffusion and mobility in semiconductor thin films in the direction perpendicular to the surface which is most relevant for devices. The method is based on standard transient absorption measurements carried out in reflectance and transmittance modes at wavelengths below the band gap where the transient response is mainly determined by the change in refractive index, which in turn depends on the distribution of photogenerated carriers across the film. This distribution is initially inhomogeneous because of absorption at the excitation wavelength and becomes uniform over time via diffusion. By modeling these phenomena we can determine the diffusion constant and respective mobility. Applying the method to a 500 nm thick triple cation FAMACs perovskite film revealed that homogeneous carrier distribution is established in few hundred picoseconds, which is consistent with mobility of 66 cm2 (V s)-1.

U2 - 10.1021/acs.jpclett.9b03427

DO - 10.1021/acs.jpclett.9b03427

M3 - Article

VL - 11

SP - 445

EP - 450

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 2

ER -