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Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm

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Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli1700705
JulkaisuIEEE Journal of Selected Topics in Quantum Electronics
Vuosikerta21
Numero6
DOI - pysyväislinkit
TilaJulkaistu - 20 maaliskuuta 2015
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

The first monolithic GaAs-based vertical-external-cavity surface-emitting laser (VECSEL) operating at 1550 nm is reported. The VECSEL operation is based on a gain mirror which was grown in a single growth run by plasma-assisted molecular beam epitaxy. The gain mirror comprised eight GaInNAsSb/GaAs quantum wells with a photoluminescence peak at 1505 nm and an AlAs/GaAs distributed Bragg reflector ensuring high reflectivity. The VECSEL chip was pumped with an 808-nm diode laser that had a large quantum defect in respect to the lasing wavelength. An output power of 80 mW in continuous wave mode and 210 mW in pulsed pump mode are demonstrated close to room temperature.

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