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Narrow-linewidth 780 nm DFB lasers fabricated using nanoimprint lithography

Tutkimustuotosvertaisarvioitu

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut51-54
JulkaisuIEEE Photonics Technology Letters
Vuosikerta30
Numero1
Varhainen verkossa julkaisun päivämäärä9 marraskuuta 2017
DOI - pysyväislinkit
TilaJulkaistu - 2018
OKM-julkaisutyyppiA1 Alkuperäisartikkeli

Tiivistelmä

The paper presents narrow-linewidth 780 nm edgeemitting semiconductor DFB lasers fabricated without regrowth using UV-nanoimprinted surface gratings. The thirdorder laterally-coupled ridge-waveguide surface gratings enable single mode operation, excellent spectral purity (40-55 dB side mode suppression ratio and 10 kHz linewidth) and good lightcurrent- voltage characteristics in continuous wave operation (~112 mA threshold current, ~1.55 V opening voltage and 28.9 mW output power from one facet at 300 mA current for 2.4 mm long devices), which are vital in various applications, such as rubidium spectroscopy and atomic clock pumping. The low fabrication costs, high throughput, structural flexibility and high device yield make the fabrication method fully compatible with large scale mass production, enabling the fabrication of low-cost miniaturized modules.